View NIMD6001_5008392.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

NIMD6001 Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW
NIMD6001 is a dual 3 Amp low-side switch with an integrated common disable input and drain diagnostic output. Pulling the Disable pin low will override any applied gate voltages and turn off both FET switches. Should either Drain-Source voltage exceed approximately 50 V, a logic 1 (> 3 V) will be asserted on the Diagnostic/Feedback pin. Internal isolation diodes permit the Disable and Diagnostic/ Feedback pins of multiple devices to be interconnected in a "wired-OR" configuration without additional components.
Features http://onsemi.com
3.0 AMPERES 60 VOLTS RDS(on) = 110 mW
SOIC-8 CASE 751 PLASTIC
* * * * * * * *
RDSON 110 mW Maximum at VGS = 10 V Avalanche Energy Specified Gate Drive Disable Input Drain-Source Voltage Diagnostic Feedback Output Electrically Isolated Drains for Low Crosstalk Internal Resistors Limit Peak Transient gate Current AEC-Q101 Qualified This is a Pb-Free Device
MARKING DIAGRAM
Source 1 Gate 1 Source 2 Gate 2 1 2 3 4 D6001 AYWWG G (Top View) D6001 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) 8 7 6 5 Drain 1 Disable Drain 2 Diag/Fbk
Applications
* Automotive Injector Driver * Solenoid / Relay Driver
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage (DC, sustained) Gate-to-Source Voltage Continuous Drain Current VGS = 10 V, RqJA = 55C/W VGS = 5.0 V, RqJA = 55C/W Single Pulse Drain Current Pulse duration = 80 ms Single Pulse Drain-to-Source Avalanche Energy VDD = 60 V; VGS = 10 V; IPK = 2.6 A; L = 42 mH; Start Tj = 25C Operating Junction Temperature Storage Temperature Symbol VDSS VGS ID Value 60 "20 3.3 3.0 10 150 Unit Vdc Vdc A
1
8
2
7
ID EAS
A mJ
3
6
4 INTERNAL DIAGRAM
5
TJ TSTG
-55 - 150 -55 - 150
C C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device NIMD6001NR2G Package SOIC-8 (Pb-Free) Shipping 2500/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2009
September, 2009 - Rev. 4
1
Publication Order Number: NIMD6001N/D
NIMD6001
PIN DESCRIPTIONS
Pin # 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 Diag/Fbk D2 Disable D1 FET 1 Source and Body FET 1 Gate FET 2 Source and Body FET 2 Gate Diagnostic Feedback - This pin will be logic high when either FET Drain-Source voltage exceeds the Drain Diagnostic threshold. FET 2 Drain Gate Disable - Pull this pin low to disable both FETs. A logic low will override voltage applied to G1 or G2. FET 1 Drain Description
THERMAL RESISTANCE
Parameter Junction-to-Ambient - min. pad footprint (Notes 1 and 2) Junction-to-Ambient - 1 Cu pad (Notes 1 and 3) Symbol RqJA RqJA Value 96 75 Units C/W
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current (Note 1) Gate Input Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance DYNAMIC CHARACTERISTICS (Note 1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-to-Source Gate Charge Gate-to-Drain Miller Charge 1. 2. 3. 4. CISS COSS CRSS RG Qg(TOT) Qgs Qgd VGS = 0 V to 5 V; VDD = 30 V; ID = 3.3 A; IG = 1.0 mA, 150 VGS = 0 V; VDS = 15 V; f = 75 kHz 150 25 8 8.3 1.1 4.2 175 170 30 15 9.0 1.6 5 kW nC pF VGS(TH) RDS(ON) RDS(ON) VDS = VGS; ID = 250 mA VGS = 10 V; ID = 3.3 A VGS = 5 V; ID = 3.0 A 1.0 1.7 60 72 3.0 110 130 mW mW V(BR)DSS IDSS IGSS VGS = 0 V; ID = 5 mA VGS = 0 V; VDS = 15 V VGS = 0 V; VDS = 15 V; TA = 150C VGS = 20 V; VDS = 0 V -100 60 67 10 80 25 20 250 +100 V mA nA Symbol Test Condition Min Typ Max Units
These values are established by statistical characterization and may not be tested. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 40 sq. mm; 1 oz.) Surface-mounted on FR4 board using 1 sq. inch heat spreader (Cu area = 625 sq. mm, 2 oz.) Refer to Figure 1 for definition of switching characteristics symbols.
http://onsemi.com
2
NIMD6001
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units SWITCHING CHARACTERISTICS (Notes 1 and 4) Turn-On Time Turn-On Delay Rise Time Turn-Off Time Turn-Off Delay Fall Time BODY DIODE Source-Drain Forward On Voltage DIAGNOSTIC FEEDBACK (Note 1) Feedback voltage Feedback Logical High voltage VDS threshold voltage for logical High VDS threshold voltage for logical Low DISABLE (Note 1) Gate Drive Disable Input Voltage, Gate Enable Gate Drive Disable Input Voltage, Gate Disable 1. 2. 3. 4. VDIS(HI) VDIS(LOW) VDIS 3.0 V, VGS = 5 V, ID = 3.0 A VDIS 0.4 V, VGS = VDS = 10 V, ID 250 mA; Tj = 150C (Note 1) 3 0.4 V V VFBK VFBK(HI) VDSFBK(HI) VDSFBK(LOW) VDS = 35 V, RFBK-SOURCE = 51 kW VDS = 60 V, RFBK-SOURCE = 51 kW Ramp VDS positive until VFBK = 3.5 V Ramp VDS negative until VFBK = 0.8 V 3.0 45 25 1.7 5.5 65 45 V V V V VSD VGS = 0 V, ISD = 3.3 A 0.85 1.25 V T(on) Td(on) Tr T(off) Td(off) Tf VGS = 10 V; VDD = 30 V; ID = 3.3 A, Ext. RGS = 47 W 6.0 1.7 3.9 24 15 9.0 28 8.0 ms
These values are established by statistical characterization and may not be tested. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 40 sq. mm; 1 oz.) Surface-mounted on FR4 board using 1 sq. inch heat spreader (Cu area = 625 sq. mm, 2 oz.) Refer to Figure 1 for definition of switching characteristics symbols.
Figure 1. Switching Characteristics Waveforms and Symbols
http://onsemi.com
3
NIMD6001
TYPICAL ELECTRICAL CHARACTERISTICS
7 6 ID, DRAIN CURRENT (A) 5 4 3 2 1 0 0 0.5 1.0 2.5 V 1.5 2.0 0 1.5 2.0 2.5 3.0 V VGS = 3.5 V ID, DRAIN-CURRENT (A) 8 TJ = 125C 6 4 2 TJ = 25C 10
TJ = -40C 3.0 3.5 4.0
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
120 100 80 60 40 20 0 -40 -20 VGS = 10 V, ID = 3.3 A
VSD, SOURCE-DRAIN FORWARD VOLTAGE (V)
Figure 2. Drain Current vs. Drain-Source Voltage and Gate-Source Voltage
RDS(on), DRAIN-SOURCE RESISTANCE (W)
Figure 3. Transfer Function (pulsed). Pulse duration = 80 ms, duty cycle < 0.5%; VDS = 2 V
1.0
VGS = 5 V, ID = 3 A
0.9
0.8
IS = 3 A
0.7
0
20
40
60
80
100
120
140
0.6 -40 -20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 4. Drain-Source On Resistance vs. Junction Temperature
3.0 ID, DRAIN CURRENT (mA) 2.5 2.0 1.5 1.0 0.5 0 TJ = 25C VFBK, DIAGNOSTIC/FEEDBACK VOLTAGE (V) 5 4 3 2 1 0
Figure 5. Body Diode Forward Voltage vs. Junction Temperature
TJ = 25C
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 6. Off-State Drain Current vs. Drain-Source Voltage (includes feedback network current)
Figure 7. Diagnostic Feedback Voltage vs. Drain-Source Voltage
http://onsemi.com
4
NIMD6001
1000
ENERGY (mJ) PEAK CURRENT (A)
100
10
1
1
10 LOAD INDUCTANCE (mH)
100
Figure 8. Single Pulse Peak Drain Current and Avalanche Energy Capability vs. Load Inductance
Figure 9. Single Pulse Peak Drain Current and Avalanche Energy Test Circuit
http://onsemi.com
5
NIMD6001
TYPICAL THERMAL RESPONSE CHARACTERISTICS
1000 RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (C/W)
100
D = 0.8 0.5 0.2 0.1 0.04 0.02 0.01
10
1
0.1
SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 ON-TIME PULSE WIDTH (s) 1 10 100 1000
Figure 10. Single Channel Active; Mounted on Minimum-Pad Board
1000 RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (C/W)
100
D = 0.8 0.5 0.2 0.1 0.04 0.02 0.01
10
1
0.1
SINGLE PULSE 0.00001 0.0001 0.001 0.1 0.01 ON-TIME PULSE WIDTH (s) 1 10 100 1000
Figure 11. Single Channel Active; Mounted on 1 Sq. Inch Copper Spreader
1000 RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (C/W) D = 0.8 0.5 0.2 0.1 10 0.04 0.02 0.01
100
1 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 ON-TIME PULSE WIDTH (s) 1 10 100 1000
0.1
Figure 12. Both Channels Active; Mounted on Minimum-Pad Board
http://onsemi.com
6
NIMD6001
TYPICAL THERMAL RESPONSE CHARACTERISTICS
1000 RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (C/W)
100
D = 0.8 0.5 0.2 0.1 0.04 0.02 0.01
10
1
0.1
SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 ON-TIME PULSE WIDTH (s) 1 10 100 1000
Figure 13. Both Channels Active; Mounted on 1 Sq. Inch Copper Spreader
1000 RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (C/W) D = 0.8 0.5 0.2 0.1 10 0.04 0.02 0.01
100
1 SINGLE PULSE 0.00001 0.0001 0.001 0.1 0.01 ON-TIME PULSE WIDTH (s) 1 10 100 1000
0.1
Figure 14. Channels Alternatively Active; Mounted on Minimum-Pad Board
1000 RqJA, PEAK JUNCTION THERMAL TRANSIENT RESPONSE (C/W)
100
D = 0.8 0.5 0.2 0.1 0.04 0.02 0.01
10
1
0.1
SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 ON-TIME PULSE WIDTH (s) 1 10 100 1000
Figure 15. Channels Alternatively Active; Mounted on 1 Sq. Inch Copper Spreader
http://onsemi.com
7
NIMD6001
TYPICAL APPLICATION CIRCUIT
C1 C2 C3 C4 +VDD
FBK
S1
D1 Injector 1 Disable
G1
S2 U1 G2 NIMD6001
D2 Injector 4 Diag
C1 C4 C2 C3 CONTROLLER FBK
S1
D1 Injector 2
G1
Disable
S2 U2 G2 NIMD6001
D2 Injector 3 Diag
Master Disable
Figure 16. 4 Cylinder Engine Fuel Injection
* 4-Cycle engine; 1 injector pulse during intake stroke * To optimize transient thermal resistance of the
NIMD6001 devices, the injector drive pulses are alternated between U1 and U2.
* Cylinder firing order is 1-3-4-2 * The coincident FBK pulse will be missing if any
injector is open or shorted.
http://onsemi.com
8
NIMD6001
PACKAGE DIMENSIONS
SOIC-8 NB CASE 751-07 ISSUE AJ
A
8 5
-X-
B
1
S
4
0.25 (0.010)
M
Y
M
-Y- G
K
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244
C -Z- H D 0.25 (0.010)
M SEATING PLANE
N
X 45 _
0.10 (0.004)
M
J
ZY
S
X
S
DIM A B C D G H J K M N S
SOLDERING FOOTPRINT*
1.52 0.060
7.0 0.275
4.0 0.155
0.6 0.024
1.270 0.050
SCALE 6:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
http://onsemi.com
9
NIMD6001N/D

▲Up To Search▲

Price & Availability of NIMD6001

	To Download NIMD6001 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .